The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Mar. 13, 2020
International Business Machines Corporation, Armonk, NY (US);
Alexander Reznicek, Troy, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Junli Wang, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a nanosheet field effect transistor (FET) device is provided. The method includes forming a plurality of nanosheet stacks on a substrate, the nanosheet stacks including alternating layers of sacrificial layers and active semiconductor layers. The method includes removing portions of the sacrificial layers to form angular indents in each side thereof, then filling the indents with a low-κ material layer. The method further includes forming source drain regions between the nanosheet stacks, removing remaining portions of the sacrificial layers, and then forming gate metal layers in spaces formed by the removal of the sacrificial layers.