The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2022
Filed:
Jun. 27, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Peng-Soon Lim, Johor, MY;
Zi-Wei Fang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, first gate structure, a first metal layer, a first protective layer, and a first contact plug. The first gate structure includes a plurality of first U-shaped layers stacked one another between the first gate spacers in a cross-sectional view and first gate spacers on opposite sides of the first U-shaped layers. The first metal layer is over the first U-shaped layers and has a different shape than the first U-shaped layers in the cross-sectional view. The first protective layer is over the first metal layer and between the first gate spacers. The first contact plug extends through the first protective layer and the first metal layer, and is in contact with the first gate structure.