The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

May. 22, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mario Pacheco, Tempe, AZ (US);

Odissei Touzanov, Chandler, AZ (US);

Jacob Woolsey, Mesa, AZ (US);

Deepak Goyal, Phoenix, AZ (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01N 29/22 (2006.01); G01N 29/04 (2006.01);
U.S. Cl.
CPC ...
G01N 29/225 (2013.01); G01N 29/043 (2013.01); G01R 31/2889 (2013.01); G01R 31/2891 (2013.01); G01N 2291/2697 (2013.01);
Abstract

According to various examples, a method for non-destructive detection of defects in a semiconductor die is described. The method may include positioning an emitter above the semiconductor die. The method may include generating an emitted wave using the emitter that is directed to a focal point on a surface of the die. The method may include generating a reflected wave from the focal point. The focal point may act as a point source reflecting the emitted wave. The method may include positioning a receiver above the die to receive the reflected wave. The method may also include measuring the reflected wave to detect modulations in amplitude in the reflected wave.


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