The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Feb. 26, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaeho Hong, Hwaseong-si, KR;
Yongseok Kim, Suwon-si, KR;
Hyuncheol Kim, Seoul, KR;
Seokhan Park, Seongnam-si, KR;
Satoru Yamada, Yongin-si, KR;
Kyunghwan Lee, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate including a recess, a first gate insulation layer on a lower sidewall and a bottom of the recess, the first gate insulation layer including an insulation material having hysteresis characteristics, a first gate electrode on the first gate insulation layer inside the recess, a second gate electrode contacting the first gate electrode in the recess, the second gate electrode including a material different from a material of the first gate electrode, and impurity regions on the substrate and adjacent to sidewalls of the recess, bottoms of the impurity regions being higher than a bottom of the second gate electrode relative to a bottom of the substrate.