The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Mar. 25, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Guillaume Bouche, Portland, OR (US);

Sean T. Ma, Portland, OR (US);

Andy Chih-Hung Wei, Yamhill, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 27/0886 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01);
Abstract

Disclosed herein are isolation regions in integrated circuit (IC) structures, as well as related methods and components. For example, in some embodiments, an IC component may include: a first region including silicon; a second region including alternating layers of a second material and a third material, wherein the second material includes silicon and germanium, the third material includes silicon, and individual ones of the layers in the second region has a thickness that is less than 3 nanometers; and a third region including alternating layers of the second material and the third material, wherein individual ones of the layers in the third region has a thickness that is greater than 3 nanometers, and the second region is between the first region and the third region.


Find Patent Forward Citations

Loading…