The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Apr. 16, 2020
Infineon Technologies Austria Ag, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Hans Weber, Bayerisch Gmain, DE;
Franz Hirler, Isen, DE;
Johannes Georg Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Maximilian Treiber, Munich, DE;
Daniel Tutuc, St. Niklas an der Drau, AT;
Andreas Voerckel, Finkenstein, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
Forming a semiconductor arrangement includes providing a first semiconductor layer having a first surface, forming a first plurality of trenches in the first surface of the first semiconductor layer, each of the trenches in the first plurality having first and second sidewalls that extend from the first surface to a bottom of the respective trench, implanting first type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, implanting second type dopant atoms into the first and second sidewalls of each of the trenches in the first plurality, and annealing the semiconductor arrangement to simultaneously activate the first type dopant atoms and the second type dopant atoms.