The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Nov. 08, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Xinhai Han, Santa Clara, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Daemian Raj Benjamin Raj, Fremont, CA (US);
Kristopher Enslow, San Jose, CA (US);
Wenjiao Wang, San Jose, CA (US);
Masaki Ogata, San Jose, CA (US);
Sai Susmita Addepalli, San Jose, CA (US);
Nikhil Sudhindrarao Jorapur, Sunnyvale, CA (US);
Gregory Eugene Chichkanoff, Mountain View, CA (US);
Shailendra Srivastava, Fremont, CA (US);
Jonghoon Baek, San Jose, CA (US);
Zakaria Ibrahimi, Santa Clara, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Tza-Jing Gung, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.