The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Mar. 30, 2020
Applicant:

Asm International N.v., Almere, NL;

Inventors:

Ernst Hendrik August Granneman, Almere, NL;

Leilei Hu, Almere, NL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/458 (2006.01); H01L 21/677 (2006.01); C23C 16/54 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45548 (2013.01); C23C 16/4401 (2013.01); C23C 16/4408 (2013.01); C23C 16/455 (2013.01); C23C 16/4583 (2013.01); C23C 16/45578 (2013.01); C23C 16/54 (2013.01); H01L 21/6776 (2013.01); H01L 21/67784 (2013.01); C23C 16/45525 (2013.01); H01J 37/3244 (2013.01);
Abstract

An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.


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