The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Mar. 07, 2017
Nissan Chemical Corporation, Tokyo, JP;
Nagoya University, Nagoya, JP;
Keisuke Hashimoto, Toyama, JP;
Yasunobu Someya, Toyama, JP;
Masaru Hori, Nagoya, JP;
Makoto Sekine, Nagoya, JP;
NISSAN CHEMICAL CORPORATION, Tokyo, JP;
NAGOYA UNIVERSITY, Nagoya, JP;
Abstract
A method for manufacturing a semiconductor substrate having a patterned group-III nitride compound layer without collapsing a formed mask pattern due to reflow or decomposition even when an etching method at a high temperature of 300° C.-700° C. is used, including the steps: forming a patterned mask layer on the substrate's group-III nitride compound layer, and etching the group-III nitride compound layer by dry etching at 300° C. or higher and 700° C. or lower using the mask pattern, to form patterned group-III nitride compound layer, wherein the patterned mask layer contains a polymer containing a unit structure of the following Formula (1): a polymer containing a unit structure of the following Formula (2):O—Ar  Formula (2)a polymer containing a structural unit of the following Formula (3):O—Ar—O—Ar-T-Ar  Formula (3)a polymer containing a combination of unit structure of Formula (2) and unit structure of Formula (3), or a crosslinked structure of the polymers.