The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2022
Filed:
Feb. 07, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Daniel Fulford, Cohoes, NY (US);
Jodi Grzeskowiak, Cuddebackville, NY (US);
Anton J. Devilliers, Clifton Park, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32115 (2013.01); H01L 21/7684 (2013.01);
Abstract
The disclosure relates to techniques and methods for planarizing a substrate by amplifying and controlling z-height technology. Variability of z-height can be modeled or measured for each device. A counter height pattern can then be created and processed on a substrate. By using different materials with different etch rates, a planarizing pattern can be transferred to the substrate or system to create a planarized substrate surface for improved lithography. Additionally, a transition region slope can be precisely controlled using the same methods.