The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Apr. 03, 2020
Winbond Electronics Corp., Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
A resistive random access memory (RRAM) and its manufacturing method are provided. The RRAM includes a substrate having an array region and a peripheral region. A plurality of memory cells and a gap-filling dielectric layer overlying the memory cells are located on the substrate and in the array region. A buffer layer only in the array region covers the gap-filling dielectric layer, and its material layer is different from that of the gap-filling dielectric layer. A first low-k dielectric layer is only located in the peripheral region, and its material is different from that of the buffer layer. A dielectric constant of the first low-k dielectric layer is less than 3. A top surface of the first low-k dielectric layer is coplanar with that of the buffer layer. A first conductive plug passes through the buffer layer and the gap-filling dielectric layer and contacts one of the memory cells.