The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jul. 22, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wen-Feng Kuo, Hsinchu, TW;

Chung-Chuan Tseng, Hsinchu, TW;

Chia-Ping Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/64 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01);
Abstract

A capacitor comprises at least one primary trench in a substrate, extending in a first direction, and at least one secondary trench in the substrate, extending in a second direction different from the first direction. The capacitor further comprises a first dielectric material separating the substrate from the first capacitor plate of a plurality of capacitor plates, and a second dielectric material separating the first capacitor plate from a second capacitor plate of the plurality of capacitor plates, wherein the first dielectric material, the second dielectric material, the first capacitor plate and the second capacitor plate are at least partially within the at least one primary trench and the at least one secondary trench in the substrate.


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