The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2022

Filed:

Jun. 24, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Sho Oikawa, Miyagi, JP;

Wakako Ishida, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01J 37/32532 (2013.01); H01L 21/0212 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01);
Abstract

Provided is an etching method performed in a substrate-processing apparatus having: a first electrode on which a substrate is placed; and a second electrode facing the first electrode, the method comprising: a first step for introducing a first gas and halfway etching a target film into a pattern of a predetermined film on the target film formed on the substrate; a second step for introducing a second gas including Ar gas, H2 gas, and deposition gas and applying DC voltage to the second electrode to form a protective film, the second step being performed after the first step; and a third step for introducing a third gas and etching the target film, the third step being performed after the step for forming the protective film.


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