The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Mar. 08, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Yusuke Muraki, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01J 37/305 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01J 37/32449 (2013.01); H01L 21/02126 (2013.01); H01L 21/67069 (2013.01);
Abstract
A method for processing a substrate on which silicon layers and silicon germanium layers are alternately disposed, includes: forming an oxide layer on a surface layer of a spacer layer based on an oxygen-containing gas radicalized using remote plasma, wherein the spacer layer having a low dielectric constant is formed at least on side surfaces of the silicon layers and the silicon germanium layers; and removing the formed oxide layer by etching.