The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Dec. 22, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Hanshen Zhang, Cupertino, CA (US);
Zhenjiang Cui, San Jose, CA (US);
Nitin Ingle, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/32136 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/53266 (2013.01); H01J 2237/3344 (2013.01); H01J 2237/3346 (2013.01);
Abstract
Exemplary methods for conditioning a processing region of a semiconductor processing chamber may include forming conditioning plasma effluents of an oxygen-containing precursor in a semiconductor processing chamber. The methods may include contacting interior surfaces of the semiconductor processing chamber bordering a substrate processing region with the conditioning plasma effluents. The methods may also include treating the interior surfaces of the semiconductor processing chamber.