The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
May. 01, 2020
Silanna Uv Technologies Pte Ltd, Singapore, SG;
Johnny Cai Tang, Baulkham Hills, AU;
Chun To Lee, West Ryde, AU;
Guilherme Tosi, Yeerongpilly, AU;
Christopher Flynn, Cherrybrook, AU;
Liam Anderson, Wentworth Point, AU;
Timothy William Bray, Vancouver, CA;
Petar Atanackovic, Henley Beach South, AU;
Silanna UV Technologies Pte Ltd, Singapore, SG;
Abstract
In some embodiments, a light emitting structure comprises a layered semiconductor stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and an electrical contact to the first set of doped layers. The first set of doped layers can comprise a first sub-layer, a second sub-layer, and a third sub-layer, where the third sub-layer is adjacent to the light emitting layer. The electrical contact to the first set of doped layers can be made to the second sub-layer. The first, second and third sub-layers can be doped n-type, and an electrical conductivity of the second sub-layer can be higher than an electrical conductivity of the first and third sub-layers. In some cases, the second sub-layer can absorb more light emitted from the light emitting layer than the first or third sub-layers.