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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11322584 B1

PDFFull Text
Date of Patent:
May. 03, 2022

Filed:

Oct. 09, 2020

Semiconductor device and manufacturing method for same

Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Shin Takizawa, Kariya, JP;

Yusuke Nonaka, Kariya, JP;

Shinichirou Yanagi, Kariya, JP;

Atsushi Kasahara, Kariya, JP;

Shogo Ikeura, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:

Posz Law Group, PLC

Primary Examiner:

Natalia A Gondarenko

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/866 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0688 (2013.01); H01L 29/66106 (2013.01); H01L 29/866 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 29/0692 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, an upper diffusion region and a lower diffusion region. The semiconductor substrate has a main surface. The upper diffusion region of a first conductivity type is disposed close to the main surface of the semiconductor device. The lower diffusion region of a second conductivity type is disposed up to a position deeper than the upper diffusion region in a depth direction of the semiconductor substrate from the main surface as a reference, and has a higher impurity concentration than the semiconductor substrate. A diode device is provided by having a PN junction surface at an interface between the upper diffusion region and the lower diffusion region, and the PN junction surface has a curved surface disposed at a portion opposite to the main surface.

Find Patent Forward Citations

Takizawa, Shin. (2022). Semiconductor device and manufacturing method for same (U.S. Patent No. 11322584). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11322584

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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