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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11322398 B1

PDFFull Text
Date of Patent:
May. 03, 2022

Filed:

Dec. 03, 2019

Process for making interconnect of group iii-v semiconductor device, and group iii-v semiconductor device including interconnect made thereby

Applicant:

National Chiao Tung University, Hsinchu, TW;

Inventors:

Edward-Yi Chang, Baoshan Township, TW;

Yueh-Chin Lin, Hsinchu, TW;

Ming-Yen Tsai, Changhua, TW;

Po-Sheng Chang, Kaohsiung, TW;

Assignee:

NATIONAL CHIAO TUNG UNIVERSITY, Hsinchu, TW;

Attorney:

Lewis Roca Rothgerber Christie LLP

Primary Examiner:

Caleen O Sullivan

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); G03F 7/32 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/38 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/0274 (2013.01); H01L 21/28575 (2013.01); H01L 21/76877 (2013.01); H01L 23/53238 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/32 (2013.01); G03F 7/38 (2013.01);
Abstract

A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.

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