The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Aug. 23, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Vivek Yadav, Boise, ID (US);
Shen Hu, Boise, ID (US);
Kangle Li, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/108 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/0228 (2013.01); H01L 21/02123 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 27/10876 (2013.01);
Abstract
An example method includes patterning a working surface of a semiconductor wafer. The example method includes performing a first deposition of a dielectric material in high aspect ratio trenches. The example method further includes performing a high pressure, high temperature vapor etch to recess the dielectric material in the trenches and performing a second deposition of the dielectric material to continue filling the trenches.