The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 03, 2022

Filed:

Jul. 10, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Masahiro Tabata, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/66 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01J 37/321 (2013.01); H01J 37/32724 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0338 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/67069 (2013.01); H01L 21/67103 (2013.01); H01L 21/67253 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01L 22/20 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3343 (2013.01); H01J 2237/3344 (2013.01); H01L 22/12 (2013.01);
Abstract

Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.


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