The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Jun. 14, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ching-Hui Lin, Taichung, TW;
Chun-Ren Cheng, Hsin-Chu, TW;
Jui-Cheng Huang, Hsinchu, TW;
Shih-Fen Huang, Hsinchu, TW;
Tung-Tsun Chen, Hsinchu, TW;
Yu-Jie Huang, Kaohsiung, TW;
Fu-Chun Huang, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.