The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Jun. 26, 2019
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Jia-Zhe Liu, Hsinchu, TW;

Yen-Lun Huang, Hsinchu, TW;

Ying-Ru Shih, Hsinchu, TW;

Assignee:

GlobalWafers Co., Ltd., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 33/22 (2010.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); C30B 25/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0607 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 33/22 (2013.01); C30B 25/20 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01);
Abstract

An epitaxial structure includes a substrate, a nucleation layer, a buffer layer, and a nitride layer. The nucleation layer is disposed on the substrate, and the nucleation layer consists of a plurality of regions in a thickness direction, wherein a chemical composition of the region is AlInN, where 0≤x≤1. The buffer layer is disposed on the nucleation layer, and a thickness of the nucleation layer is less than a thickness of the buffer layer. The nitride layer is disposed on the buffer layer, wherein a roughness of a surface of the nucleation layer in contact with the buffer layer is greater than a roughness of a surface of the buffer layer in contact with the nitride layer.


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