The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Mar. 23, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/167 (2006.01); H01L 21/306 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1104 (2013.01); H01L 21/26513 (2013.01); H01L 21/30604 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/66545 (2013.01);
Abstract
Embodiments disclosed herein include transistor devices with depopulated channels. In an embodiment, the transistor device comprises a source region, a drain region, and a vertical stack of semiconductor channels between the source region and the drain region. In an embodiment, the vertical stack of semiconductor channels comprises first semiconductor channels, and a second semiconductor channel over the first semiconductor channels. In an embodiment, first concentrations of a dopant in the first semiconductor channels are less than a second concentration of the dopant in the second semiconductor channel.