The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2022
Filed:
Jun. 02, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jyh-Nan Lin, Hsinchu, TW;
Chia-Yu Wu, Hsinchu, TW;
Kai-Shiung Hsu, Hsinchu, TW;
Ding-I Liu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); C23F 1/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76829 (2013.01); C23F 1/12 (2013.01); H01L 21/02178 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53295 (2013.01);
Abstract
A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.