The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Mar. 09, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huai Huang, Saratoga, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Nicholas Anthony Lanzillo, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 21/76837 (2013.01); H01L 21/76843 (2013.01); H01L 23/481 (2013.01);
Abstract

A method for fabricating a semiconductor device including a skip via connection between metallization levels includes subtractively etching first conductive material to form a first via and a skip via on a first conductive line. The first via and the first conductive line are included within a first metallization level. The skip via is used to connect the first metallization level to a third metallization level above a second metallization level. The method further includes forming, on the first via from second conductive material, a second via disposed on a second conductive line. The second via and the second conductive line are included within the second metallization level.


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