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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11309396 B1

PDFFull Text
Date of Patent:
Apr. 19, 2022

Filed:

Nov. 14, 2019

Semiconductor device and manufacturing method thereof

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Hao Wu, Hsinchu, TW;

Zhi-Chang Lin, Zhubei, TW;

Ting-Hung Hsu, MiaoLi, TW;

Kuan-Lun Cheng, Hsin-chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Walter H Swanson

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/092 (2006.01); B82Y 10/00 (2011.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 21/822 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 29/08 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/8221 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823828 (2013.01); H01L 27/0688 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/1211 (2013.01); H01L 27/1248 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/66469 (2013.01);
Abstract

A semiconductor device includes a first device formed over a substrate. The first device includes a first gate stack encircling a first nanostructure, and the first device is a logic circuit device. The semiconductor device includes a second device formed over the first device. The second device includes a second gate stack encircling a second nanostructure, and the second device is a static random access memory (SRAM).

Find Patent Forward Citations

Wu, Wei-Hao. (2022). Semiconductor device and manufacturing method thereof (U.S. Patent No. 11309396). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11309396

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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