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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11309385 B1

PDFFull Text
Date of Patent:
Apr. 19, 2022

Filed:

Jul. 27, 2020

Strained nanowire cmos device and method of forming

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Yi Peng, Taipei, TW;

Hung-Li Chiang, Taipei, TW;

Yu-Lin Yang, Baoshan Township, TW;

Chih Chieh Yeh, Taipei, TW;

Yee-Chia Yeo, Hsinchu, TW;

Chi-Wen Liu, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Sheikh Maruf

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/82 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/8238 (2006.01); H01L 21/308 (2006.01); H01L 29/786 (2006.01); H01L 21/306 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01); H01L 21/3065 (2013.01);
Abstract

Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

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