The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2022
Filed:
Aug. 06, 2019
Applicant:
Siltectra Gmbh, Dresden, DE;
Inventors:
Christian Beyer, Freiberg, DE;
Jan Richter, Dresden, DE;
Ralf Rieske, Dresden, DE;
Marko Swoboda, Dresden, DE;
Albrecht Ullrich, Dresden, DE;
Assignee:
Siltectra GmbH, Dresden, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); B23K 26/53 (2014.01); B28D 5/00 (2006.01); H01L 21/78 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3221 (2013.01); B23K 26/53 (2015.10); B28D 5/0011 (2013.01); H01L 21/78 (2013.01); B23K 2101/40 (2018.08);
Abstract
A method includes: providing a semiconductor body having a generation plane and crystal lattice planes which intersect the generation plane at intersecting lines; generating modifications in the semiconductor body by multiphoton excitation and which are spaced apart from one another, the modifications altering a physical property of the semiconductor body so as to form subcritical cracks in the generation plane; and separating a solid-state layer from the semiconductor body by connecting the subcritical cracks in the generation plane.