The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

May. 04, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsiu-Ting Chen, Tainan, TW;

Yi-Ming Huang, Tainan, TW;

Shih-Chieh Chang, Taipei, TW;

Hsing-Chi Chen, Hsin-Chu, TW;

Pei-Ren Jeng, Chu-Bei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 29/0847 (2013.01); H01L 29/32 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes an epitaxial straining region formed within a semiconductor substrate, the straining region being positioned adjacent to a gate stack, the gate stack being positioned above a channel. The straining region comprises a defect comprising two crossing dislocations such that a cross-point of the dislocations is closer to a bottom of the straining region than to a top of the straining region. The straining region comprises an element with a smaller lattice constant than a material forming the substrate.


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