The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

May. 07, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yun-Wei Cheng, Taipei, TW;

Chun-Hao Chou, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Shih-Hsun Hsu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14659 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14629 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01);
Abstract

The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.


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