The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Jul. 03, 2017
Applicant:

Siltronic Ag, Munich, DE;

Inventors:

Patrick Moos, Pleiskirchen, DE;

Hannes Hecht, Burghausen, DE;

Assignee:

SILTRONIC AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/687 (2006.01); C30B 25/12 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68742 (2013.01); C30B 25/12 (2013.01); C30B 29/06 (2013.01); H01L 21/68792 (2013.01); H01L 21/68785 (2013.01);
Abstract

A device for handling a semiconductor wafer in an epitaxy reactor has a susceptor; longitudinal holes extending through the susceptor; a wafer lifting shaft; wafer lifting pins guided through the longitudinal holes; a susceptor carrying shaft; susceptor carrying arms; susceptor support pins; guide sleeves anchored in the susceptor carrying arms; and guide elements protruding from the guide sleeves which, at upper ends, have bores into which wafer lifting pins are inserted, and which can be raised and lowered together with the wafer lifting pins by the wafer lifting shaft.


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Moos, Patrick. (2022). Device for handling a semiconductor wafer in an epitaxy reactor and method for producing a semiconductor wafer having an epitaxial layer (U.S. Patent No. 11302565). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11302565

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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