The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Nov. 06, 2017
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Richard Johannes Franciscus Van Haren, Waalre, NL;

Victor Emanuel Calado, Rotterdam, NL;

Leon Paul Van Dijk, Eindhoven, NL;

Roy Werkman, Eindhoven, NL;

Everhardus Cornelis Mos, Best, NL;

Jochem Sebastiaan Wildenberg, Aarle-Rixtel, NL;

Marinus Jochemsen, Veldhoven, NL;

Bijoy Rajasekharan, Eindhoven, NL;

Erik Jensen, Veldhoven, NL;

Adam Jan Urbanczyk, Utrecht, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70525 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01); G03F 7/20 (2013.01);
Abstract

A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.


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