The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Feb. 11, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ssu-Yu Chen, New Taipei, TW;

Shang-Chieh Chien, New Taipei, TW;

Li-Jui Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05G 2/00 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H05G 2/005 (2013.01); G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); H05G 2/008 (2013.01);
Abstract

An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.


Find Patent Forward Citations

Loading…