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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11289651 B1

PDFFull Text
Date of Patent:
Mar. 29, 2022

Filed:

Sep. 01, 2017

Memory device having via landing protection

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tsung-Hsueh Yang, Taichung, TW;

Shih-Chang Liu, Alian Township, TW;

Yuan-Tai Tseng, Zhubei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Allen L Parker

Assistant Examiner:

Charles N Ausar-El

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1675 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01);
Abstract

A memory cell with a hard mask and a sidewall spacer of different material is provided. The memory cell comprises a bottom electrode disposed over a substrate. A switching dielectric is disposed over the bottom electrode and having a variable resistance. A top electrode is disposed over the switching dielectric. A hard mask disposed over the top electrode. A sidewall spacer extends upwardly along sidewalls of the switching dielectric, the top electrode, and the hard mask. The hard mask and the sidewall spacer have different etch selectivity. A method for manufacturing the memory cell is also provided.

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Yang, Tsung-Hsueh. (2022). Memory device having via landing protection (U.S. Patent No. 11289651). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11289651

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