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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11289578 B1

PDFFull Text
Date of Patent:
Mar. 29, 2022

Filed:

Apr. 30, 2019

Selective etching to increase threshold voltage spread

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Yi Lee, Hsinchu, TW;

Ya-Huei Li, Tainan, TW;

Da-Yuan Lee, Jhubei, TW;

Ching-Hwanq Su, Tainan, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Telly D Green

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 21/3215 (2006.01); H01L 21/8234 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 21/28568 (2013.01); H01L 21/3215 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/4966 (2013.01);
Abstract

A method includes forming a gate dielectric comprising a portion extending on a semiconductor region, forming a barrier layer comprising a portion extending over the portion of the gate dielectric, forming a work function tuning layer comprising a portion over the portion of the barrier layer, doping a doping element into the work function tuning layer, removing the portion of the work function tuning layer, thinning the portion of the barrier layer, and forming a work function layer over the portion of the barrier layer.

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