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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11289374 B1

PDFFull Text
Date of Patent:
Mar. 29, 2022

Filed:

Nov. 29, 2017

Nucleation-free gap fill ald process

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yihong Chen, San Jose, CA (US);

Kelvin Chan, San Ramon, CA (US);

Xinliang Lu, Fremont, CA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Yong Wu, Sunnyvale, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Chia Cheng Chin, Santa Clara, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Servilla Whitney LLC

Primary Examiner:

Bradley Smith

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01L 21/285 (2006.01); H01L 21/687 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); C23C 16/02 (2013.01); C23C 16/4584 (2013.01); C23C 16/45553 (2013.01); H01L 21/28568 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 21/76843 (2013.01); H01L 21/76861 (2013.01); H01L 23/53266 (2013.01);
Abstract

Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

Find Patent Forward Citations

Chen, Yihong. (2022). Nucleation-free gap fill ald process (U.S. Patent No. 11289374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11289374

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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