The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2022

Filed:

Aug. 13, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Eric Christopher Stevens, Tempe, AZ (US);

Bhushan Zope, Phoenix, AZ (US);

Shankar Swaminathan, Phoenix, AZ (US);

Charles Dezelah, Helsinki, FI;

Qi Xie, Wilsele, BE;

Giuseppe Alessio Verni, Ottignies, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); C23C 16/34 (2006.01); C23C 16/02 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); H01L 27/108 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
C23C 16/34 (2013.01); C23C 16/0272 (2013.01); C23C 16/08 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); G11C 5/063 (2013.01); H01L 21/28088 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/7851 (2013.01); H01L 29/78696 (2013.01);
Abstract

Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.


Find Patent Forward Citations

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Stevens, Eric. (2022). Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film (U.S. Patent No. 11286558). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11286558

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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