The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Jul. 10, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate having a channel region. A gate dielectric layer is over the channel region of the semiconductor substrate. A work function metal layer is over the gate dielectric layer. The work function metal layer has a bottom portion, an upper portion, and a work function material. The bottom portion is between the gate dielectric layer and the upper portion. The bottom portion has a first concentration of the work function material, the upper portion has a second concentration of the work function material, and the first concentration is higher than the second concentration. A gate electrode is over the upper portion of the work function metal layer.