The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2022
Filed:
Oct. 17, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Po-Cheng Shih, Hsin Chiu, TW;
Tze-Liang Lee, Hsinchu, TW;
Jen-Hung Wang, Hsinchu County, TW;
Yu-Kai Lin, Changhua County, TW;
Su-Jen Sung, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The structure includes a conductive feature formed in an insulating layer. The structure also includes a first metal-containing dielectric layer formed over the insulating layer and covering the top surface of the conductive feature. The structure further includes a silicon-containing dielectric layer formed over the first metal-containing dielectric layer. In addition, the structure includes a second metal-containing dielectric layer formed over the silicon-containing dielectric layer. The second metal-containing dielectric layer includes a material that is different than the material of the first metal-containing dielectric layer.