The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 17, 2019
Infineon Technologies Austria Ag, Villach, AT;
Michael Nelhiebel, Villach, AT;
Heiko Assmann, Dresden, DE;
Olaf Heitzsch, Coswig, DE;
Jakob Kriz, Weinboehla, DE;
Sven Lanzerstorfer, Feldkirchen, AT;
Rainer Pelzer, Wernberg, AT;
Werner Robl, Regensburg, DE;
Bernhard Weidgans, Bernhardswald, DE;
Johannes Zechner, Schiefling, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.