The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 03, 2018
Tokyo Electron Limited, Tokyo, JP;
Toshiharu Wada, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for providing etch selectivity in substrate processing is disclosed. More particularly, a plasma treatment is provided to a plurality of exposed structures comprised of varying materials. The plasma treatment will preferentially enhance the etch selectivity between at least two of the exposed structures. In one embodiment, the plurality of exposed structures are utilized as part of a multi-patterning substrate process. In one embodiment, the exposed structures may comprise an organic planarization layer and a spin-on-metal layer. The plasma treatment may comprise a plasma formed using nitrogen and hydrogen gasses and the emission of vacuum ultra-violet (VUV) wavelength radiation from such a plasma.