The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Dec. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Ling Chang Chien, Hsinchu, TW;
Chien-Chih Chen, Taipei, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Ching-Yu Chang, Yuansun Village, TW;
Yahru Cheng, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 125/06 (2006.01); C09D 125/18 (2006.01); C09D 133/12 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); C09D 125/16 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02118 (2013.01); C09D 125/06 (2013.01); C09D 125/16 (2013.01); C09D 125/18 (2013.01); C09D 133/12 (2013.01); H01L 21/0273 (2013.01); H01L 21/0332 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/31144 (2013.01); H01L 21/768 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.