The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2022
Filed:
Mar. 31, 2020
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/28 (2006.01); G11C 16/30 (2006.01); G11C 16/32 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0441 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/30 (2013.01); G11C 16/32 (2013.01); G11C 16/3431 (2013.01);
Abstract
A vertical NAND string in a channel-stacked 3D memory device may be programmed using ISPP scheme, wherein a preparation step is introduced immediately after each verification step and before the start of a corresponding verification step. During the preparation step, the electrons accumulated in the channel may be drained by the selected bit line for enhancing the coupling effect of the channel, thereby reducing program disturb and increasing program speed.