The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2022

Filed:

May. 10, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Shigehiro Miura, Iwate, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); H01L 21/687 (2006.01); C23C 16/505 (2006.01); H01L 21/683 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 16/24 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4584 (2013.01); C23C 16/24 (2013.01); C23C 16/402 (2013.01); C23C 16/45519 (2013.01); C23C 16/45544 (2013.01); C23C 16/45548 (2013.01); C23C 16/50 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01J 37/3244 (2013.01); H01L 21/02274 (2013.01); H01L 21/683 (2013.01); H01L 21/68764 (2013.01);
Abstract

A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.


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