The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2022
Filed:
Mar. 16, 2018
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Anna Maria Conti, Agrate Brianza, IT;
Cristina Casellato, Sulbiate, IT;
Andrea Redaelli, Casatenovo, IT;
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 21/76802 (2013.01); H01L 21/76892 (2013.01); H01L 21/76897 (2013.01); H01L 23/5226 (2013.01); H01L 27/2409 (2013.01);
Abstract
One embodiment provides a method of making a memory device. The method includes forming a via in a bit line, an interlayer and a dielectric region. The bit line is formed on the interlayer. The interlayer is formed partially on the dielectric region and partially on a plurality of memory cells. The via has a first end included in, and in direct contact with, the bit line and a second end to couple to an electrical contact.