The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Apr. 28, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chanro Park, Clifton Park, NY (US);

Kenneth Chun Kuen Cheng, Albany, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Brent Anderson, Jericho, VT (US);

Somnath Ghosh, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76892 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01); H01L 21/76805 (2013.01); H01L 21/76819 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/53242 (2013.01);
Abstract

A method is presented for back-end-of-the-line (BEOL) metallization with lines formed by subtractive patterning and vias formed by damascene processes. The method includes depositing a dielectric layer over a conductive layer formed over a substrate, forming spacers surrounding mandrel sections formed over the dielectric layer, selectively depositing gap fill material adjacent the spacers, selectively removing the spacers, etching the dielectric layer and the conductive layer to expose a top surface of the substrate, depositing and planarizing an interlayer dielectric, selectively forming openings in the dielectric layer, and filling the openings with a conductive material to define metal vias.


Find Patent Forward Citations

Park, Chanro. (2022). Beol metallization formation (U.S. Patent No. 11270913). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11270913

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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