The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jan. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Lang Chen, Madou Township, TW;

Chih-Chiang Tu, Tauyen, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/46 (2012.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); G03F 1/24 (2013.01); G03F 1/46 (2013.01); H01L 21/0276 (2013.01);
Abstract

A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).


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