The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 08, 2022

Filed:

Jul. 30, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Hsien Chang, Changhua County, TW;

Chun-Ren Cheng, Hsin-Chu, TW;

Wei-Cheng Shen, Tainan, TW;

Wen-Chien Chen, New Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0072 (2013.01); B81B 3/0013 (2013.01); B81C 1/00476 (2013.01); B81C 1/00666 (2013.01); B81C 1/00968 (2013.01); B81C 1/00984 (2013.01); B81B 2201/0257 (2013.01); B81B 2207/012 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/017 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0163 (2013.01); B81C 2201/053 (2013.01); B81C 2203/0792 (2013.01); H04R 2201/003 (2013.01);
Abstract

A method of manufacturing a semiconductor structure includes providing a first substrate, disposing and patterning a plate over the first substrate, disposing a first sacrificial oxide layer over the plate, forming a plurality of recesses over a surface of the first sacrificial oxide layer, disposing and patterning a membrane over the first sacrificial oxide layer, disposing a second sacrificial oxide layer to surround the membrane and cover the first sacrificial oxide layer; and forming a plurality of conductive plugs passing through the plate or the membrane, wherein the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.


Find Patent Forward Citations

Loading…