The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Mar. 05, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ming-Che Ku, Hsinchu, TW;
Jun-Yao Chen, Taoyuan, TW;
Sheng-Huang Huang, Hsinchu, TW;
Jiun-Yu Tsai, Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Hung-Cho Wang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a magnetic random access memory (MRAM) device includes forming a bottom electrode layer over a substrate including an inter-metal dielectric (IMD) layer having a metal line therein; forming a barrier layer over the bottom electrode layer; forming a magnetic tunnel junction (MTJ) layer stack over the bottom electrode layer; forming a dielectric layer over the MTJ layer stack; forming an opening in the dielectric layer to expose the barrier layer; filling the opening in the dielectric layer with a top electrode; after filling the opening in the dielectric layer with the top electrode, etching the dielectric layer to expose the barrier layer; and patterning the MTJ layer stack to form an MTJ stack that exposes the bottom electrode layer.