The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Nov. 18, 2020
United Microelectronics Corp., Hsinchu, TW;
En-Chiuan Liou, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
Provided is a manufacturing method of s semiconductor structure. The method includes: providing a substrate, wherein the substrate has a plurality of fin portions and at least one recessed portion, the at least one recessed portion is located between two adjacent fin portions of the plurality of fin portions and a bottom surface of the at least one recessed portion is lower than a surface of the substrate between the two of the plurality of fin portions; forming a doping layer on a sidewall of the plurality of fin portions, the surface of the substrate, and a sidewall and a bottom portion of the at least one recessed portion; and forming a dielectric layer on the doping layer. A top surface of the doping layer and a top surface of the dielectric layer are lower than a top surface of each of the plurality of fin portions.